PDF MMBT2222A Data sheet ( Hoja de datos )

Número de pieza	MMBT2222A
Descripción	General Purpose Transistor
Fabricantes	SeCoS
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1. NPN Planar Transistor - Cystek Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! Elektronische Bauelemente MMBT2222A NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching COLLECTOR 3 1 BASE 2 EMITTER A L 3 Top View 12 BS 3 1 2 VG C D HK J MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 30 40 60 75 5.0 6.0 600 Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Max Unit 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RqJA TJ, Tstg 417 – 55 to +150 °C/W °C MMBT2222 = M1B; MMBT2222A = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm Min Max Unit 30 — Vdc 40 — 60 — Vdc 75 — 5.0 — Vdc 6.0 — Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR±5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MMBT2222A ICEX — 10 nAdc MMBT2222 ICBO — 0.01 µAdc MMBT2222A — 0.01 MMBT2222 — 10 MMBT2222A — 10 MMBT2222A IEBO — 100 nAdc MMBT2222A IBL — 20 nAdc REM : Thermal Clad is a trademark of the Bergquist Company. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 1 page Elektronische Bauelemente MMBT2222A NPN Silicon General Purpose Transistor 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 1.0 k Figure 11. “On” Voltages +0.5 0 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 – 2.0 RqVB for VBE – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, Collect Current (mA) Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 5 5 Page

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