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PDF DMT3009LDT Data sheet ( Hoja de datos )
| Número de pieza | DMT3009LDT | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMT3009LDT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 & Q2 30V
RDS(ON) Max
11.1mΩ @ VGS = 10V
13.8mΩ @ VGS = 4.5V
22.0mΩ @ VGS = 3.8V
ID Max
TC = +25°C
(Note 10)
30A
28A
22A
Features and Benefits
Low Gate Threshold Voltage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state Case: V-DFN3030-8
resistance (RDS(ON)), yet maintain superior switching performance, Case Material: Molded Plastic, “Green” Molding Compound.
making it ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
General Purpose Interfacing Switch
Weight: 0.02 grams (Approximate)
Power Management Functions
V-DFN3030-8
Q1 Q2
S2 S2 S2 G2
5678
S1/D2
PIN 1 PIN 1
Top View
Bottom View
D1
4321
D1 D1 D1 G1
PIN 1
Bottom View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT3009LDT-7
Case
V-DFN3030-8
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
V-DFN3030-8
T30
T30= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
DMT3009LDT
Document number: DS37810 Rev. 3 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated
1 page  
DMT3009LDT
0.024
0.02
VGS=3.8V, ID=5.0A
0.016
0.012
VGS=4.5V, ID=7.0A
0.008
0.004
VGS=10V, ID=14.4A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
VGS=0V, TJ=25℃
25
VGS=0V, TJ=85℃
20
VGS=0V, TJ=125℃
15
VGS=0V, TJ=150℃
10
5
VGS=0V, TJ=-55℃
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
f=1MHz
1000
Ciss
100
Crss
Coss
10
0
5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
2
1.8
1.6
ID=1mA
1.4
1.2
1 ID=250μA
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100000
10000
1000
100
150℃
125℃
85℃
10
25℃
1
0.1
0
5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current
vs. Voltage
10
8
6
VDS=15V, ID=14.4A
4
2
0
0 3 6 9 12 15
Qg (nC)
Figure 12. Gate Charge
DMT3009LDT
Document number: DS37810 Rev. 3 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet DMT3009LDT.PDF ] | |
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