(PDF) RB520S-30 Datasheet - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Número de pieza	RB520S-30
Descripción	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricantes	SEMTECH
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No Preview Available ! RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low current rectification and high speed switching applications Features • Extremely small surface mounting type • High reliability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 B Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Note: ESD sensitive product handling required. Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.6 1 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1 page

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PDF RB520S-30 Data sheet ( Hoja de datos )