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PDF 1N5822 Data sheet ( Hoja de datos )
| Número de pieza | 1N5822 | |
| Descripción | Schottky Barrier Rectifiers | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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 1. 3A, 40V, Schottky Barrier Rectifier  Hay una vista previa y un enlace de descarga de 1N5822 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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CREAT BY ART
3A, 20V - 40V Schottky Barrier Rectifiers
1N5820 - 1N5822
Taiwan Semiconductor
FEATURES
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 1.10g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL 1N5820
1N5821
1N5822
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
20
30
40
VRMS
14
21
28
VDC 20 30 40
IF(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
70
Maximum instantaneous forward voltage (Note 1)
@3A
VF 0.475 0.500 0.525
Maximum reverse current @ rated VR
TJ=25°C
TJ=100°C
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
IR
CJ
RθJA
TJ
TSTG
0.5
10
200
40
- 55 to +125
- 55 to +125
UNIT
V
V
V
A
A
V
mA
pF
°C/W
°C
°C
Document Number: D1307015
Version: H15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1N5822.PDF ] | |
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